Synthesis and characterization of arrested precipitation assembled Cu2Se thin films

S. M. Karape; D. M. Sirsat; K. S. Pakhare; S. S. Jadhav; S. T. Sankpal

doi:10.53730/ijhs.v6nS6.9674

Authors

S. M. Karape Assistant Professor Anandibai Raorane Arts, Commerce and Science College, Vaibhavwadi, Maharashtra, India
D. M. Sirsat Assistant Professor, Anandibai Raorane Arts, Commerce and Science College, Vaibhavwadi, Maharashtra, India
K. S. Pakhare Assistant Professor, Anandibai Raorane Arts, Commerce and Science College, Vaibhavwadi, Maharashtra, India
S. S. Jadhav Assistant Professor, Materials Research Laboratory, P. G. Department of Chemistry, Balwant College Vita, Maharashtra, India
S. T. Sankpal Assistant Professor, Dept. of Chemistry, Athalye Sapre Pitre College Devrukh, Ratnagiri, Maharashtra, India

Keywords:

arrested precipitation technique, thin films, copper selenide, optical properties

Abstract

Nanostructured thin films of copper selenide (Cu₂Se) deposited by arrested precipitation technique (APT) with controlled release of ions at suitable pH=10.5. The deposited Cu₂Se films were characterized for optical, structural, and morphological properties. Optical absorption study indicates that the band gap energy (2.26 eV) of material and shows visible radiation absorption. XRD shoe that APT is a favorable technique for the synthesis of pure nanocrystalline Cu₂Se thin films with monoclinic crystal structure. An electrochemical impedance spectroscopy analysis confirms the charge transfer resistance. X-ray photoelectron spectroscopy reveals stoichiometry at valance state of Cu₂Se.

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